Фазовая диаграмма системы Ga-Si

К оглавлению: Другие диаграммы (Others phase diargams)


Ga-Si (Gallium-Silicon) R.W. Olesinski, N. Kanani, and G.J. Abbaschian The Si-Ga system is characterized by a eutectic reaction at a temperature very close to the melting point of Ga (29.7741 C). The solid solubility of Ga in ( Si) is retrograde, with a maximum solubility of 0.1 at.% Ga near 1200 C. Si exhibits no appreciable solid solubility in Ga. The assessed phase diagram is based on the work of [48Kle], [53Kec], [60Thu], and [77Gir]. The Si-Ga phase diagram was obtained by thermodynamic optimization of the experimental data. The calculations were based on the assump- tion that the enthalpy and entropy of mixing are temperature independent and that the mutual solubilities of Si and Ga in the solid state are nil. [80Whi], who investigated the formation of Si-rich supersaturated substitutional alloys by ion implantation and laser annealing, obtained increased solid solubility (0.9 at.% Ga, compared to 0.09 at.% Ga). 48Kle: W. Klemm, L. Klemm, E. Hohmann, H. Volk, E. Orlamunder, and H.A. Klein, Z. Anorg. Chem., 256, 239-252 (1948). 53Kec: P.H. Keck and J. Broder, Phys. Rev., 90, 521-522 (1953). 60Thu: C.D. Thurmond and M. Kowalchik, Bell Sys. Tech. J., 39, 169-204 (1960). 77Gir: B. Girault, C.R. Acad. Sci. Paris B, 284, 1-4 (1977). 80Whi: C.W. White, S.R. Wilson, B.R. Appleton, and F.W. Young, Jr., J. Appl. Phys., 51, 738-749 (1980). Published in Bull. Alloy Phase Diagrams, 6(4), Aug 1985. Complete evaluation contains 2 figures, 4 tables, and 19 references. 1