Фазовая диаграмма системы Ge-Sn

К оглавлению: Другие диаграммы (Others phase diargams)


Ge-Sn (Germanium-Tin) R.W. Olesinski and G.J. Abbaschian The equilibrium phases of the Ge-Sn system are the liquid; the solid solution of Sn in (Ge), which has a retrograde character (the maximum solubility is about 1.1 at.% Sn at about 400 C, and the solubility at the eutectic temperature is possibly less than 1 at.% Sn); and the solid solution of Ge in ( bSn), which might contain small amounts of Ge at the eutectic temperature. No data are available involving phase equilibria with aSn. The assessed phase diagram is based primarily on the work of [58Tru], [60Thu], and [80For]. Because of their potential use in semiconducting devices, amorphous Ge-Sn alloys have been studied extensively. The effect of pressure on the semiconductor-to-metal transition of amorphous Ge-Sn films prepared by evaporation on mica substrates indicated that the transition occurs at 60, 65, and 72 kbar for films containing 0, 5, and 10 at.% Sn, respectively. Pure crystalline Ge also exhibits the pressure-induced semiconductor-to-metallic transition at 100 to 125 kbar. Formation of the crystalline (Ge) phase with extended solid solubility was also reported; samples were prepared by furnace cooling, air and water quenching, and splat cooling. The extension of the Sn solid solubility in splat-cooled Ge samples was also reported. 58Tru: F.A. Trumbore, C.R. Isenberg, and E.M. Porbansky, J. Phys. Chem. Solids, 9, 60-69 (1958). 60Thu: C.D. Thurmond and M. Kowalchik, Bell Sys. Tech. J., 39, 169-204 (1960). 80For: M. Fornaris, Y.M. Muggianu, M. Gambino, and J.P. Bros, Z. Naturforsch., A, 35, 1256-1264 (1980). Published in Bull. Alloy Phase Diagrams, 5(3), Jun 1984. Complete evaluation contains 4 figures, 5 tables, and 38 references. 1