Фазовая диаграмма системы Bi-Si

К оглавлению: Другие диаграммы (Others phase diargams)


Bi-Si (Bismuth-Silicon) R.W. Olesinski and G.J. Abbaschian The Si-Bi system is characterized by a monotectic transformation at 1400 C and a eutectic transformation at a temperature very close to the melting point of Bi (271.442 C). The equilibrium phases are (1) the liquid, L, with a monotectic composition at 3.3 at.% Bi; (2) the terminal (Si) solid solution, which is retrograde with a maximum solubility of about 0.0018 at.% Bi at 1350 C; and (3) the terminal (Bi) solid solution, with negligible solubility of Si. The assessed phase diagram was obtained by optimization of select experimental data [60Thu, 77Gir] using least-squares regression analysis. The work of [07Wil] and [56Ful] was also reviewed. Solid solubility of Bi in (Si) was extended to 0.8 at.% Bi by ion implantation and subsequent laser annealing [80Whi]. The implantation was conducted into Si wafers with a dose of 1.2 x 10-15/cm2 and 250 keV at room temperature; laser annealing was performed with a 15 ns pulse at an energy density of 1.5 J/ cm2. 07Wil: R.S. Williams, Z. Anorg. Chem., 55, 1-33 (1907) in German. 56Ful: C.S. Fuller and J.A. Ditzenberger, J. Appl. Phys., 27, 544-553 (1956). 60Thu: C.D. Thurmond and M. Kowalchik, Bell Sys. Tech. J., 39, 169-204 (1960). 77Gir: B. Girault, C.R. Acad. Sci. Paris B, 284, 1-4 (1977) in French. 80Whi: C.W. White, S.R. Wilson, B.R. Appleton, and F.W. Young, Jr., J. Appl. Phys., 51, 738-749 (1980). Published in Bull. Alloy Phase Diagrams, 6(4), Aug 1985. Complete evaluation contains 2 figures, 4 tables, and 10 references. 1